کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
5354726 | 1388180 | 2012 | 5 صفحه PDF | دانلود رایگان |

An electrodeposition route for preparing Cu2ZnSnSe4 thin films for thin film solar cell absorber layers is demonstrated. The Cu2ZnSnSe4 thin films are prepared by co-electrodeposition Cu-Zn-Sn metallic precursor and subsequently annealing in element selenium atmosphere. The structure, composition and optical properties of the films were investigated by X-ray diffraction (XRD), Raman spectrometry, energy dispersive spectrometry (EDS) and UV-VIS absorption spectroscopy. The Cu2ZnSnSe4 thin film with high crystalline quality was obtained, the band gap and absorption coefficient were 1.0Â eV and 10â4Â cmâ1, which is quite suitable for solar cells fabrication. A solar cell with the structure of ZnO:Al/i-ZnO/CdS/Cu2ZnSnSe4/Mo/glass was fabricated and achieved an conversion efficiency of 1.7%.
⺠It is the first report of fabricating Cu2ZnSnSe4 solar cells by electrodeposition route. ⺠CZTSe formation mechanism at different temperature was studied in this paper. ⺠A Cu2ZnSnSe4 solar cell was fabricated and achieved an conversion efficiency of 1.7%.
Journal: Applied Surface Science - Volume 258, Issue 17, 15 June 2012, Pages 6261-6265