Ga-doped ZnO films deposited with varying sputtering powers and substrate temperatures by pulsed DC magnetron sputtering and their property improvement potentials

► ZnO:Ga transparent electrode films by pulsed DC magnetron sputtering. ► Synergistic contribution of sputtering power and temperature in combination. ► 100 nm-thick film fulfilled required properties with improvement margins. ► Dopant Ga as electron donor and carrier suppressor deactivating oxygen vacancy. ► Necessity of careful control of doping efficiency for optimal properties.