Electrodeposited AgInSe2 onto TiO2 films for semiconductor-sensitized solar cell application: The influence of electrodeposited time

► AgInSe2 with tetragonal body structure was successfully electrodeposited on TiO2/ITO. ► The prepared AgInSe2 film exhibits n-type semiconductor behavior with two band gap energies around 1.27-1.80 eV. ► The electrodeposited time of 45 min results in the highest photocurrent, fill factor, and solar to electricity conversion efficiency of the AgInSe2-based semiconductor-sensitized solar cells. ► The AgInse2 film with an electrodeposited time of 45 min displays the longest electron lifetime and slowest open circuit voltage decay rate.