کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
5354802 | 1503618 | 2015 | 5 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Rapid growth of single-layer graphene on the insulating substrates by thermal CVD
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موضوعات مرتبط
مهندسی و علوم پایه
شیمی
شیمی تئوریک و عملی
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Rapid growth of single-layer graphene on the insulating substrates by thermal CVD Rapid growth of single-layer graphene on the insulating substrates by thermal CVD](/preview/png/5354802.png)
چکیده انگلیسی
The advance of CVD technique to directly grow graphene on the insulating substrates is particularly significant for further device fabrication. As graphene is catalytically grown on metal foils, the degradation of the sample properties is unavoidable during transfer of graphene on the dielectric layer. Moreover, shortening the treatment time as possible, while achieving single-layer growth of graphene, is worthy to be investigated for promoting the efficiency of mass production. Here we performed a rapid heating/cooling process to grow graphene films directly on the insulating substrates by thermal CVD. The treating time consumed is â25% compared to conventional CVD procedure. In addition, we found that high-quality, single-layer graphene can be formed on quartz, but on SiO2/Si substrate only few-layer graphene can be obtained. The pronounced substrate effect is attributed to the different dewetting behavior of Ni films on the both substrates at 950 °C.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Applied Surface Science - Volume 346, 15 August 2015, Pages 41-45
Journal: Applied Surface Science - Volume 346, 15 August 2015, Pages 41-45
نویسندگان
C.Y. Chen, D. Dai, G.X. Chen, J.H. Yu, K. Nishimura, C.-T. Lin, N. Jiang, Z.L. Zhan,