کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
5354843 1503618 2015 7 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Fabrication of high-brightness GaN-based light-emitting diodes via thermal nanoimprinting of ZnO-nanoparticle-dispersed resin
موضوعات مرتبط
مهندسی و علوم پایه شیمی شیمی تئوریک و عملی
پیش نمایش صفحه اول مقاله
Fabrication of high-brightness GaN-based light-emitting diodes via thermal nanoimprinting of ZnO-nanoparticle-dispersed resin
چکیده انگلیسی
We fabricated high-brightness GaN-based light-emitting diodes (LEDs) with highly refractive patterned structures by using a thermal nanoimprint lithography (NIL). A highly refractive ZnO-nanoparticle-dispersed resin (ZNDR) was used in NIL, and a submicron hole, a submicron high-aspect-ratio pillar, and microconvex arrays were fabricated on the indium tin oxide (ITO) top electrode of GaN-based LED devices. We analyzed the light extraction mechanism for each of the three types of patterns by using a finite element method simulation, and found that the high-aspect-ratio pillar had a great ability to improve light extraction owing to its waveguide effect and prominent scattering effect. As a result, the light output power, which was measured in an integrating sphere, of the LED device was enhanced by up to 19.6% when the high-aspect-ratio pillar array was formed on the top ITO electrode of the device. Further, the electrical properties of none of the patterned LED devices fabricated using ZNDR degraded in comparison to those of bare LED devices.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Applied Surface Science - Volume 346, 15 August 2015, Pages 354-360
نویسندگان
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