کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
5354861 | 1503618 | 2015 | 5 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Comparison of S-band radio-frequency field emission performance of nitrogen-doped nanocrystalline diamond before and after O2/Ar plasma etching
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
شیمی
شیمی تئوریک و عملی
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Comparison of S-band radio-frequency field emission performance of nitrogen-doped nanocrystalline diamond before and after O2/Ar plasma etching Comparison of S-band radio-frequency field emission performance of nitrogen-doped nanocrystalline diamond before and after O2/Ar plasma etching](/preview/png/5354861.png)
چکیده انگلیسی
The effect of surface nanostructuring via reactive O2/Ar plasma etching on the S-band radio-frequency (RF) field emission performance for nitrogen-doped nanocrystalline diamond (N-NCD) films was preliminarily investigated. A transition in terms of surface morphology, from dense flower-like aggregated shape having low roughness (â¼41Â nm) to uniform porous structure with increased surface roughness (â¼104Â nm), was observed after plasma etching. Raman spectra revealed there was no obvious change in the bonding characteristics between the pristine and nanostructured N-NCD films. At surface RF gradient of 72.1Â MV/m, maximum current density of 80.2Â mA/cm2 was reached for the nanostructured N-NCD cathode, increasing about 41% compared to that of the pristine N-NCD cathode. Furthermore, the mechanism in the enhanced RF field emission was tentatively discussed through the measured Fowler-Nordheim (F-N) features.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Applied Surface Science - Volume 346, 15 August 2015, Pages 484-488
Journal: Applied Surface Science - Volume 346, 15 August 2015, Pages 484-488
نویسندگان
Wenhong Han, Ying Xiong, Bing Wang, Xiangkun Li, Li Xu,