کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
5355073 | 1388185 | 2011 | 5 صفحه PDF | دانلود رایگان |

BiFeO3/Zn1âxMnxO (x = 0-0.08) bilayered thin films were deposited on the SrRuO3/Pt/TiO2/SiO2/Si(1 0 0) substrates by radio frequency sputtering. A highly (1 1 0) orientation was induced for BiFeO3/Zn1âxMnxO. BiFeO3/Zn1âxMnxO thin films demonstrate diode-like and resistive hysteresis behavior. A remanent polarization in the range of 2Pr â¼Â 121.0-130.6 μC/cm2 was measured for BiFeO3/Zn1âxMnxO. BiFeO3/Zn1âxMnxO (x = 0.04) bilayer exhibits a highest Ms value of â¼15.2 emu/cm3, owing to the presence of the magnetic Zn0.96Mn0.04O layer with an enhanced Ms value.
⺠Bilayered BiFeO3/Zn1âxMnxO (x = 0-0.08) thin films have highly (1 1 0) orientation. ⺠Diode-like and resistive hysteresis behavior is demonstrated for all bilayers. ⺠A large remanent polarizationof 2Pr â¼Â 121.0-â¼130.6 μC/cm2 for all bilayers. ⺠A highest Ms value of â¼15.2 emu/cm3 for BiFeO3/Zn1âxMnxO (x = 0.04).
Journal: Applied Surface Science - Volume 258, Issue 4, 1 December 2011, Pages 1390-1394