کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
5355232 1503598 2016 6 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Ultra-multiple and reproducible resistance levels based on intrinsic crystallization properties of Ge1Sb4Te7 film
موضوعات مرتبط
مهندسی و علوم پایه شیمی شیمی تئوریک و عملی
پیش نمایش صفحه اول مقاله
Ultra-multiple and reproducible resistance levels based on intrinsic crystallization properties of Ge1Sb4Te7 film
چکیده انگلیسی

- The resistivity of Ge1Sb4Te7 gradually dropped by about 3-4 orders of magnitude due to crystallization with the annealing temperature, which is critical to realize multiple resistance levels.
- The ultra-multiple 27 resistance levels in TiSi3/GST147 lateral phase-change memory device were demonstrated, much more than reported until now.
- The reproducibility of the six resistance levels without programming algorism such as write-certification were demonstrated and these levels were distinguishable from each other.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Applied Surface Science - Volume 369, 30 April 2016, Pages 348-353
نویسندگان
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