کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
5355273 1503694 2013 4 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
The distribution of elements in sequentially prepared MgB2 on SiC buffered Si substrate and possible pinning mechanisms
موضوعات مرتبط
مهندسی و علوم پایه شیمی شیمی تئوریک و عملی
پیش نمایش صفحه اول مقاله
The distribution of elements in sequentially prepared MgB2 on SiC buffered Si substrate and possible pinning mechanisms
چکیده انگلیسی
► Superconducting MgB2 thin films were prepared on SiC substrates by sequential method. ► XPS spectra indicate that SiC is not incorporated into MgB2 film but the distribution of carbon and silicon in the film is observed. ► XPS spectra indicate a reaction between MgB2 and MgO at higher temperature (830 °C). ► XPS spectrum suggests the possibility of the substitution carbon for boron in MgB2.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Applied Surface Science - Volume 269, 15 March 2013, Pages 29-32
نویسندگان
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