On the difference between optically and electrically determined resistivity of ultra-thin titanium nitride films

► We determined the resistivity of ultra-thin TiN films in the thickness range 0.65-20 nm using both spectroscopic ellipsometry and electrical test structure methods. ► The comparison showed the considerable difference in resistivity obtained from the two methods for films thinner than 4 nm. ► The significant difference was attributed to the scattering effects at grain boundaries and interfaces.