Zinc-doped gallium phosphide nanowires for photovoltaic structures

► We studied the influence of the dopant precursor DEZn on GaP nanowire growth in a set of six samples with gradually increased DEZn molar fraction in the reactor. ► Precursor influence on the nanowire shape was observed in SEM. ► Measurements of NW field-effect transistor (NW-FET) devices showed the influence of the DEZn molar fraction on the nanowire electrical parameters. ► When the DEZn molar fraction exceeds 9 × 10−6, nanowire growth is hindered and only small stumps and kinked wires are grown.