Sputtered ITO for application in thin-film silicon solar cells: Relationship between structural and electrical properties

► The relationship between structural and electrical properties of RF magnetron-sputtered ITO thin layers was studied. ► ITO layers grown at surprisingly low temperature of 125 °C exhibited remarkably high value of Hall mobility of 49 cm2/V s. ► It was revealed that high Hall mobility is related to domain formations on surface as observed by AFM and SEM. ► ITO layers were applied as front contacts in μc-Si:H solar cells on rigid and flexible substrates (maximum efficiency: 8.4%).