Quantification of InxGa1−xP composition modulation by nanometric scale HAADF simulations

► Use of scanning transmission electron microscopy-high angle annular dark field (STEM-HAADF) to quantify composition modulation. ► Quantification of composition modulation in InxGa1−xP layer. ► Absolute variation in Indium content in InxGa1−xP layer of 4.25%. ► The compositional variation of the compound affects the Eg, causing negative effects on the overall efficiency of the device.