Behaviour of amorphous silicon carbide in Au/a-SiC/Si heterostructures prepared by PECVD technology using two different RF modes

► Au/a-Si1−xCx/c-Si(p)/Al structures were prepared by PECVD deposition technique. ► Electrical and dielectrical properties of amorphous silicon carbide a-Si1−xCx:H films were studied (C-V and I-V measurements). ► AFM and FTIR were used to study the surface of prepared films.