About electrical properties of passivated SiO2/Si structures prepared electro-chemically in HClO4 solutions

► New experimental results of passivation process of Si MOS structures in KCN and/or HCN solutions are presented. ► MOS samples annealed under bias at temperatures up to 500 K were investigated. ► Mutual relation between density of interface defect states and flat-band voltage of C-V curves has been found.