Electrical characterization of the AIIIBV-N heterostructures by capacitance methods

► Three MQW InGaAsN/GaAs heterostructures with various nitrogen ratios were compared. ► CV method and Deep Level Transient Spectroscopy measurements were used. ► Fluctuations in CV curves around 0 V are due to free carriers' emission from QW. ► DLTS shows that the similar system of defects is present in all samples. ► Multilevel evaluation confirmed the presence of deep level ET1 in all samples.