Biomolecule nanoparticle-induced nanocomposites with resistive switching nonvolatile memory properties

Highly stable iron oxide nanoparticle (Fe2O3 NP)-based resistive switching nonvolatile memory (RSNM) devices were successfully prepared via thermal calcination of layer-by-layer assembled ferritin multilayers. The resulting devices exhibited reversible resistive switching behavior with stable high and low current states with a ratio of 103 and long-term memory retention of up to 105 s. These electrical switching phenomena were caused by the formation and rupture of conductive filamentary paths under an applied external bias, which can be demonstrated on the basis of the memristive model. Our study demonstrates that inorganic oxide-based electric devices can be produced by solution-based layer-by-layer assembly of bio-nanomaterials instead of synthesized inorganic or organic materials.