Effect of ultraviolet light exposure to boron doped hydrogenated amorphous silicon oxide thin film

► We investigated effect of ultraviolet light exposure on p-type a-SiO:H films. ► Change in Urbach energy is lower for films with higher oxygen content. ► Hydrogen diffusion is lower for films with higher oxygen content. ► In higher oxides more OB bonds are converted to SiB bonds due to the UV light. ► Overall degradation of the films are lower for films with higher oxygen content.