Atomistic modeling and HRTEM analysis of misfit dislocations in InN/GaN heterostructures

► Identification of misfit dislocations (MD) in-plane configuration in InN/GaN interfaces. ► Energetic mapping designates that MD arrays adopt 〈1 1 −2 0〉 line directions with b = 1/3〈2 −1 −1 0〉. ► Local arrangement of the Moiré fringes depends strongly on the thickness of the TEM foil as revealed by HRTEM image simulations. ► Geometric Phase Analysis on simulated images justifies results obtained by energetic mapping.