Submicron Raman and photoluminescence topography of InAs/Al(Ga)As quantum dots structures

► Exciton recombination in an ensemble of indirect/direct band-gap (In,Al)As/AlAs QDs with type-I band alignment is studied. ► Resonant Raman scattering was applied for evaluation of composition at various depths InAlAs/AlAs QDs sandwich structures. ► Depth distribution of composition in In(Ga,Al)As alloy layers explained by strain-driven enhanced interdiffusion.