A comparison of the mechanical stability of silicon nitride films deposited with various techniques

► LPCVD, RTCVD and ALD as-deposited nitride films present tensile stress dependant on the Si/N ratio and are thermally stable. ► Stress of as-deposited PECVD nitride layers range from compressive to tensile, depending on ion bombardment during growth. ► After high temperature annealing, PECVD nitride films behave similarly to LPCVD layers. ► Young's moduli and density are positively correlated.