Resistive hysteresis and capacitance effect in NiFe2O4/SrTiO3: Nb(1Â wt%) junctions

► Epitaxial ferrite-based NFO/STON junctions were fabricated by reactive cosputtering. ► Current-voltage curves show rectifying and asymmetrical hysteresis characteristics. ► The hysteretic loops are considered to stem from the capacitance effect. ► The interface of the junction has a large areal capacitance of ∼100 nF/mm2.