Synthesis and analysis of silicon nanowire below Si-Au eutectic temperatures using very high frequency plasma enhanced chemical vapor deposition

► Gold colloid and SiH4 were used as catalytic and precursor gas, respectively, to grow silicon nanowires using the very high frequency plasma enhanced chemical vapor deposition (VHFPECVD) technique. ► The SiNWs have grown at below Au-Si eutectic temperature (as low as 250 °C). ► SiNWs were grown via vapor-solid-solid (VSS) mechanism. ► SiNWs have a crystalline Si core and amorphous sheath.