Structural properties and preparation of Si-rich Si1−xCx thin films by radio-frequency magnetron sputtering

Si-rich silicon carbide (Si1−xCx) thin films were prepared by radio-frequency (2 MHz, 13.56 MHz and 27.12 MHz) magnetron sputtering. The results show that the films compositions are related to the energy of ions impacting the SiC target. At the lower sputtering power, Si-rich Si1−xCx (1−x = 0.57-0.90) thin films can be well deposited.