XPS analyses of Ta/MgOx/Ni81Fe19/MgOx/Ta films

► Ta/MgOx/Ni81Fe19/MgOx/Ta films were prepared by magnetron sputtering. The anisotropic magnetoresistance (AMR) increases dramatically after annealing. ► The chemical states of Ta and MgOx at the interface of the NiFe/MgOx/Ta films, which were prepared at the different technological conditions, were analyzed by X-ray photoelectron spectroscopy (XPS). ► The AMR of Ta/MgOx/Ni81Fe19/MgOx/Ta films is related to the chemical states of MgOx. These states were produced under different technical conditions and influence the film properties.