The structural and optoelectronic properties of Ti-doped ZnO thin films prepared by introducing a Cr buffer layer and post-annealing

► The effects of buffer layer and annealing on properties of TZO films were studied. ► All films exhibited strong (0 0 2) diffraction peaks of hexagonal structure. ► The buffered TZO films had lower resistivity and higher energy band gap. ► The decrease in resistivity was mainly attributed to increase in Hall mobility. ► Optimal electrical and optical properties were obtained after annealing at 500 °C.