Annealing effects on properties of Ag-N dual-doped ZnO films

► The influence of post-annealing conditions on the properties of p-type ZnO:(Ag,N) films was investigated. ► Transition from n-type to p-type conduction occurred at the annealing temperature of 400 °C. ► The hole concentration first increases and then decreases with increasing annealing temperature. The optimum annealing temperature is about 500 °C. ► The ZnO:(Ag,N) films exhibit a strong ultraviolet emission after annealing in O2.