کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
5356081 | 1503589 | 2016 | 30 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
First-principles studies on substitutional doping by group IV and VI atoms in the two-dimensional arsenene
دانلود مقاله + سفارش ترجمه
دانلود مقاله ISI انگلیسی
رایگان برای ایرانیان
موضوعات مرتبط
مهندسی و علوم پایه
شیمی
شیمی تئوریک و عملی
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
The electronic characteristics of group IV and VI atoms-doped arsenene are investigated by means of first-principles methods. The results show that the influences of group IV and VI impurities are obvious on electronic structures in the arsenene. The spin-up and spin-down states induced by C, Si, Ge and O substituting As atoms lie on the both sides of Fermi level in the arsenene, and induce deeper impurity states with total magnetic moment 1 μB. However, Te substituting As atom is the most possible n-type doping due to the shallowest transition level. These results are useful to further investigate experimentally the electronic structures and magnetic properties of group IV and VI atoms-doped arsenene nanosheets.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Applied Surface Science - Volume 378, 15 August 2016, Pages 350-356
Journal: Applied Surface Science - Volume 378, 15 August 2016, Pages 350-356
نویسندگان
Juan Du, Congxin Xia, Tianxing Wang, Xu Zhao, Xiaoming Tan, Shuyi Wei,