Epitaxial growth of Nb-doped SrTiO3 films by pulsed laser deposition

► Epitaxial films of Nb-doped SrTiO3 were grown on (0 0 1)-oriented SrTiO3 single crystal substrates. ► Films were deposited in vacuum (5 × 10−3 mTorr) or under oxygen flow (60 mTorr). ► Highly strained coherent films were obtained up to a film thickness of 200 nm. ► Films deposited in oxygen had higher concentration of point defects than films grown in vacuum. ► Strain relaxation in thick films (>200 nm) occurred by redistribution of point defects and 3D growth.