Deposition and characterization of layer-by-layer sputtered AgGaSe2 thin films

► Sputtering technique has been used for the deposition of AgGaSe2 thin films. ► There was a pronounce effect of post-annealing on chemical composition of samples. ► Mono phase AgGaSe2 was obtained at 600 °C annealing temperature. ► Band gap values were found to be varying between 1.55 and 1.77 eV. ► The crystal-field and spin-orbit splitting levels were resolved.