Nanoscale semiconductor Pb1−xSnxSe (x = 0.2) thin films synthesized by electrochemical atomic layer deposition

► The semiconductor is synthesized at room temperature by electrochemical atomic layer deposition (EC-ALD) ► The SEM demonstrates that the EC-ALD methodology is promising in controlling the Pb1−xSnxSe (x = 0.2) compounds' growth and forming homogeneous deposits at nanometer scale. ► The excellent photoelectric performance of the compound is verified with a light on-off test.