کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
5356556 | 1503611 | 2015 | 24 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Sn doping in thermoelectric Bi2Te3 films by metal-organic chemical vapor deposition
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
شیمی
شیمی تئوریک و عملی
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
Sn-doped Bi2Te3 films were grown on vicinal GaAs (0 0 1) substrates by metal-organic chemical vapor deposition at 360 °C. Trimethylbismuth and diisopropyltellurium, which are alkyl-based, were used as the Bi and Te sources, respectively. Tetrakis(dimethylamino)tin (TDMASn) and tetramethyltin (TMSn) were used as the Sn precursors. Both Sn precursors successfully converted the carrier type of the Bi2Te3 films from n- to p-type and achieved a high Seebeck coefficient. In the case of the Sn-doped Bi2Te3 films with TDMASn, however, the Sn concentration could not be monotonically controlled by the amount of the precursor, and even the hole concentration was almost invariant despite the drastic increase in the amount of the precursor. In the case of the Sn-doped Bi2Te3 films grown with TMSn, on the other hand, the Sn and hole concentrations could be easily controlled by the variation in the flow rate of the H2 carrier gas. In particular, the hole concentration varied over a range of 1-5 Ã 1019/cm3 in which a thermoelectric power factor can be maximized despite a very high vapor pressure of TMSn. The growth of high-quality Sn-doped Bi2Te3 films was possible using all alkyl-based precursors.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Applied Surface Science - Volume 353, 30 October 2015, Pages 232-237
Journal: Applied Surface Science - Volume 353, 30 October 2015, Pages 232-237
نویسندگان
Kwang-Chon Kim, Beomjin Kwon, Hyun Jae Kim, Seung-Hyub Baek, Dow-Bin Hyun, Seong Keun Kim, Jin-Sang Kim,