Effect of nitrogen flow rate on the properties of TiN film deposited by e beam evaporation technique

► Titanium nitride films with different nitrogen flow rates have been deposited at room temperature. ► The XRD results revealed the presence of strong FCC Ti (1 1 1) and TiN (2 0 0) phases. ► The XPS results shows presence of three groups of Ti 2p doublet. ► FESEM results showed a smooth morphology of the film with columnar grain structure. ► The electrical resistivity was found to decrease with the increase in nitrogen flow.