Effect of annealing temperature on properties of RF sputtered Cu(In,Ga)Se2 thin films

► Significantly loss of Se occur when films annealed under 300 °C. ► Film composition remains constant as annealing temperature went beyond 350 °C. ► Phase transformation from amorphous to chalcopyrite polycrystalline structure occurred at 300 °C. ► Surface morphology has strong dependence on the annealing temperature.