کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
5356882 | 1388209 | 2011 | 10 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Controlling precursor stability and evaporation through molecular design. Pseudo single source precursor approach to MOCVD SrTiO3 thin films
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
شیمی
شیمی تئوریک و عملی
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چکیده انگلیسی
Strontium titanate SrTiO3 thin films have attracted interest as a possible gate dielectric material. Preparation of its high quality coatings is hindered by difference in volatility of the homometallic precursors - strontium beta-diketonates and titanium alkoxides. The only earlier known single-source precursor, a sec-alkoxide derivative Sr2Ti2(thd)4(OiPr)8, has limited volatility. Bimetallic primary alkyl chain complexes, Sr4Ti2O(thd)4(OR)10(ROH)2, RÂ =Â Et, nPr, are stable and volatile, but possess a wrong composition. Highly volatile precursor Sr2Ti2(thd)4(OiBu)8 has been prepared using an iso-alkoxide, combining proper ligand size with the sterical requirements, and characterized by multivariate evaporation analysis. Its evaporation is associated with complete decomposition into homometallic species, which, however, are evaporated in a single step. This permits to successfully use this novel precursor for SrTiO3 thin film deposition by DLI-MOCVD technique in a sufficiently broad established temperature range. Using optimized experimental conditions, 100Â nm thick strontium titanate films with high permittivity have been successfully obtained on (1Â 0Â 0) Si.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Applied Surface Science - Volume 257, Issue 6, 1 January 2011, Pages 2281-2290
Journal: Applied Surface Science - Volume 257, Issue 6, 1 January 2011, Pages 2281-2290
نویسندگان
Gulaim A. Seisenbaeva, Suresh Gohil, Vadim G. Kessler, Michel Andrieux, Corinne Legros, Patrick Ribot, M. Brunet, E. Scheid,