Ferroelectric domain switching investigation of BiFeO3 thin film on Pt/Ti/SiO2/Si (1Â 1Â 1) substrate

► The original ferroelectric domains was dominantly upward. ► The upward swiching of ferroelectric domains was harder than downward one. ► An unsymmetric ferroelectric hysteresis loop. ► The grain boundary and domain displacement/creation restrict the domain switching.