Preparation of thin Ga-doped ZnO layers for core-shell GaP/ZnO nanowires

► Core-shell nanowires were prepared by combination of RF sputtering and MOVPE growth. ► PN junction was created between n-type ZnO and p-type GaP material. ► Focused ion beam was used for preparation of ohmic contacts to ZnO/GaP nanowires.