Differences between GaAs/GaInP and GaAs/AlInP interfaces grown by movpe revealed by depth profiling and angle-resolved X-ray photoelectron spectroscopies

Differences between GaAs/GaInP and GaAs/AlInP interfaces grown by movpe revealed by depth profiling and angle-resolved X-ray photoelectron spectroscopies

Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Applied Surface Science - Volume 360, Part B, 1 January 2016, Pages 477-484

M.C. López-Escalante, M. Gabás, I. García, E. Barrigón, I. Rey-Stolle, C. Algora, S. Palanco, J.R. Ramos-Barrado,