کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
5357395 | 1388218 | 2012 | 6 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Characterization of indium tin oxide films by RF-assisted DC magnetron sputtering
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موضوعات مرتبط
مهندسی و علوم پایه
شیمی
شیمی تئوریک و عملی
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چکیده انگلیسی
⺠A high quality of ITO film deposited on PET substrate at room temperature was achieved by a commercial RF-assisted DC magnetron sputter. ⺠A moderate sputtering rate and denser microstructure of ITO films can be achieved by this unique sputter. ⺠The electrical resistivity was obtained a minimum value of 5.3 Ã 10â4 Ω cm by wisely adjusting to a 50% RF portion of the total power. ⺠The electrical resistivity and optical transmission of ITO films were further improved to 3.9 Ã 10â4 Ω cm and 90% by flowing 2 sccm of O2 gas. ⺠This research dominates the feasibility of in-line mass production of ITO-coated PET films at room temperature for OLED and touch panel applications.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Applied Surface Science - Volume 258, Issue 15, 15 May 2012, Pages 5593-5598
Journal: Applied Surface Science - Volume 258, Issue 15, 15 May 2012, Pages 5593-5598
نویسندگان
Boen Houng, Adam Wang,