Investigation of defects in ultra-thin Al2O3 films deposited on pure copper by the atomic layer deposition technique

Some residual OH ligands originating from incomplete reaction between TMA and surface species of OH* during ALD process induce the defects in deposited Al2O3 films. Three possible types of defects are suggested. The analytic results indicate the defects are Type-I and/or Type-II but do not directly expose the substrate, like pinholes (Type-III).