Influence of sputtering power on composition, structure and electrical properties of RF sputtered CuIn1−xGaxSe2 thin films

► We investigated the effect of sputtering power on structure and properties of RF sputtered CIGS films. ► At high sputtering power, CIGS films exhibit Cu-poor composition feature and partly amorphous phase structure. ► The 50 W and 100 W as-deposited films exhibit metal and semiconductor character, respectively. ► Annealed films exhibit improved crystalline quality and almost the same composition as the as-deposited ones.