کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
5357755 | 1503639 | 2015 | 4 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Effect of growth pressure on the characteristics of β-Ga2O3 films grown on GaAs (1 0 0) substrates by MOCVD method
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موضوعات مرتبط
مهندسی و علوم پایه
شیمی
شیمی تئوریک و عملی
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
The β-Ga2O3 films were grown on GaAs (1 0 0) substrates by metal-organic chemical vapor deposition method. The influences of growth pressure on the surface morphology, crystal quality and electrical properties of β-Ga2O3 films were investigated using FE-SEM, XRD and leakage current measurements. It was found that the growth pressure could obviously influence the preferred orientation and growth rate of the β-Ga2O3 films prepared from 2000 Pa to 10,000 Pa. At the growth pressure of 5000 Pa, we obtained β-Ga2O3 film with relatively high resistance. According to the XRD phi-scan results, the in-plane epitaxial relationship could be confirmed as β-Ga2O3 [0 1 0]||GaAs ã0 1 1ã and β-Ga2O3 [0 0 1]||GaAs ã0 1 1ã. In addition, the effect of growth pressure on the parasitic gas-phase reaction was studied to explain the changes of growth rate.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Applied Surface Science - Volume 325, 15 January 2015, Pages 258-261
Journal: Applied Surface Science - Volume 325, 15 January 2015, Pages 258-261
نویسندگان
Yuanpeng Chen, Hongwei Liang, Xiaochuan Xia, Rensheng shen, Yang Liu, Yingmin Luo, Guotong Du,