کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
5358095 | 1503648 | 2014 | 4 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Realization of Ag-S codoped p-type ZnO thin films
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موضوعات مرتبط
مهندسی و علوم پایه
شیمی
شیمی تئوریک و عملی
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چکیده انگلیسی
Ag-S codoped ZnO films have been grown on quartz substrates by e-beam evaporation at low temperature (100 °C). The effects of Ag2S content on the structural and electrical properties of the films were investigated. The results showed that 2 wt% Ag2S doped films exhibited p-type conduction, with a resistivity of 0.0347 Ω cm, a Hall mobility of 9.53 cm2 Vâ1 sâ1, and a hole concentration of 1.89 Ã 1019 cmâ3 at room temperature. The X-ray photoelectron spectroscopy measurements showed that Ag and S have been incorporated into the films. To further confirm the p-type conduction of Ag-S codoped ZnO films, a ZnO:(Ag, S)/i-ZnO/ZnO:Al homojunction was fabricated and rectifying behaviors of which was measured. High electrical performance and low growth temperature indicate that Ag2S is a promising dopant to fabricate p-type Ag-S codoped ZnO films.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Applied Surface Science - Volume 316, 15 October 2014, Pages 62-65
Journal: Applied Surface Science - Volume 316, 15 October 2014, Pages 62-65
نویسندگان
Tian Ning Xu, Xiang Li, Zhong Lu, Yong Yue Chen, Cheng Hua Sui, Hui Zhen Wu,