کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
5358190 | 1388229 | 2010 | 6 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Defects of SiC nanowires studied by STM and STS
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موضوعات مرتبط
مهندسی و علوم پایه
شیمی
شیمی تئوریک و عملی
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Defects of SiC nanowires studied by STM and STS Defects of SiC nanowires studied by STM and STS](/preview/png/5358190.png)
چکیده انگلیسی
For the first time the scanning tunneling microscopy (STM) and scanning tunneling spectroscopy (STS) are employed to investigate the morphology and the surface electronic structure of the defective silicon carbide nanowires (SiCNWs). The SiCNWs produced via combustion synthesis route are studied. The STS measurements are performed in the current imaging tunneling spectroscopy mode (CITS) that allows us to determine the correlation between STM topography and the local density of electronic states (LDOS) around the bend of an isolated SiCNW. The measurements reveal fluctuations of LDOS in the vicinity of the defect. The local graphitisation and the inhomogeneous concentration of doping impurities (e.g. nitrogen, oxygen) are considered to explain these fluctuations of metallic-like LDOS in the vicinity of the SiCNW's deformation.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Applied Surface Science - Volume 256, Issue 15, 15 May 2010, Pages 4771-4776
Journal: Applied Surface Science - Volume 256, Issue 15, 15 May 2010, Pages 4771-4776
نویسندگان
A. Busiakiewicz, A. Huczko, T. Dudziak, M. Puchalski, W. KozÅowski, M. Cichomski, S. CudziÅo, Z. Klusek, W. Olejniczak,