کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
5358310 | 1503617 | 2015 | 30 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Fractal characterization of the silicon surfaces produced by ion beam irradiation of varying fluences
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
شیمی
شیمی تئوریک و عملی
پیش نمایش صفحه اول مقاله
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چکیده انگلیسی
Si (1Â 0Â 0) is bombarded with 200Â keV Ar+ ion beam at oblique incidence with fluences ranging from 3Â ÃÂ 1017Â ions/cm2 to 3Â ÃÂ 1018Â ions/cm2. The surface morphology of the irradiated surfaces is captured by the atomic force microscopy (AFM) for each ion fluence. The fractal analysis is performed on the AFM images. The autocorrelation function and height-height correlation function are used as fractal measures. It is found that the average roughness, interface width, lateral correlation length as well as roughness exponent increase with ions fluence. The analysis reveals the ripple pattern of the surfaces at higher fluences. The wavelength of the ripple surfaces is computed for each ion fluence.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Applied Surface Science - Volume 347, 30 August 2015, Pages 706-712
Journal: Applied Surface Science - Volume 347, 30 August 2015, Pages 706-712
نویسندگان
R.P. Yadav, T. Kumar, A.K. Mittal, S. Dwivedi, D. Kanjilal,