کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
5358338 | 1503650 | 2014 | 5 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Dielectric and ferroelectric properties of (100)-oriented 0.9Pb(Sc0.5Ta0.5)O3 -0.1%PbTiO3/0.55Pb(Sc0.5Ta0.5)O3-0.45%PbTiO3 heterostructures
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موضوعات مرتبط
مهندسی و علوم پایه
شیمی
شیمی تئوریک و عملی
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
The 0.9Pb(Sc0.5Ta0.5)O3-0.1%PbTiO3/0.55Pb(Sc0.5Ta0.5)O3-0.45%PbTiO3 (PSTT10/PSTT45) multilayer thin films were deposited on SiO2/Si(1 0 0) substrates by radio frequency magnetron sputtering technique with a LaNiO3 buffer layer, and the films were subsequently annealed by a two-steps rapid thermal approach. With this method, the films possess a highly (1 0 0) orientation, which is attributed to the introduction of LaNiO3 buffer layer. Enhanced dielectric and ferroelectric properties were observed in the multilayer thin films with low anneal temperatures of 700-750 °C. Typically, the films annealed at 700 °C have a high dielectric constant of â¼698.5 and a low dielectric loss of 0.054. In addition, such a thin film also exhibits a large remnant polarization of 5.45 μC/cm2. The crystallization, the percentage pyrochlore and the loss of Pb are considered to play an important role on electric properties of the films.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Applied Surface Science - Volume 314, 30 September 2014, Pages 124-128
Journal: Applied Surface Science - Volume 314, 30 September 2014, Pages 124-128
نویسندگان
Xuedong Li, Hong Liu, Gang Liu, Dingquan Xiao, Jianguo Zhu,