کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
5358396 | 1503650 | 2014 | 6 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Ti/Al ohmic contacts on AlGaN/GaN heterostructures with different defect density
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موضوعات مرتبط
مهندسی و علوم پایه
شیمی
شیمی تئوریک و عملی
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چکیده انگلیسی
In this paper, the electrical and structural properties of Ti/Al Ohmic contacts have been investigated comparing two AlGaN/GaN heterostructures with different dislocation density (4 Ã 109 cmâ2 and 12 Ã 109 cmâ2, respectively). After thermal annealing, the Ti/Al bilayer deposited on the more defective sample became Ohmic at a lower annealing temperature (500 °C) with respect to the contact formed on the better material (800 °C). Moreover a different temperature dependence of the specific contact resistance RC has been observed in the two samples. The electrical behavior has been correlated with a structural and morphological analysis of surfaces and interfaces, attributing a key role to the presence of V-shaped defects on the AlGaN surface. Indeed, nanoscale conductive atomic force microscopy measurements revealed a preferential conduction through these defects, and consistently explained the temperature dependence of RC.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Applied Surface Science - Volume 314, 30 September 2014, Pages 546-551
Journal: Applied Surface Science - Volume 314, 30 September 2014, Pages 546-551
نویسندگان
Giuseppe Greco, Ferdinando Iucolano, Corrado Bongiorno, Filippo Giannazzo, Marcin Krysko, Mike Leszczynski, Fabrizio Roccaforte,