کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
5358429 1388232 2010 5 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Optimization of porous silicon preparation technology for SERS applications
موضوعات مرتبط
مهندسی و علوم پایه شیمی شیمی تئوریک و عملی
پیش نمایش صفحه اول مقاله
Optimization of porous silicon preparation technology for SERS applications
چکیده انگلیسی
A series of porous silicon samples prepared at different etching parameters, namely etchant composition, etching time and current density, was investigated as substrates for surface-enhanced Raman scattering (SERS). Silver nanostructures were deposited on porous silicon by immersion plating method and Rhodamine 6G was used as analyte. The relation between the etching parameters, morphology of porous silicon surface and its SERS efficiency after silver deposition is examined. We show that a high HF content in the etchant allows the formation of a film with close-packed silver nanocrystals, which possess strong surface enhancement properties.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Applied Surface Science - Volume 256, Issue 11, 15 March 2010, Pages 3369-3373
نویسندگان
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