کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
5358440 | 1388232 | 2010 | 6 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Growth characteristics and properties of ZnO:Ga thin films prepared by pulsed DC magnetron sputtering
دانلود مقاله + سفارش ترجمه
دانلود مقاله ISI انگلیسی
رایگان برای ایرانیان
موضوعات مرتبط
مهندسی و علوم پایه
شیمی
شیمی تئوریک و عملی
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Growth characteristics and properties of ZnO:Ga thin films prepared by pulsed DC magnetron sputtering Growth characteristics and properties of ZnO:Ga thin films prepared by pulsed DC magnetron sputtering](/preview/png/5358440.png)
چکیده انگلیسی
Transparent conductive ZnO:Ga thin films were deposited on Corning 1737 glass substrate by pulsed direct current (DC) magnetron sputtering. The effects of process parameters, namely pulse frequency and film thickness on the structural and optoelectronic properties of ZnO:Ga thin films are evaluated. It shows that highly c-axis (0 0 2) oriented polycrystalline films with good visible transparency and electrical conductivity were prepared at a pulsed frequency of 10 kHz. Increasing the film thickness also enlarged the grain size and carrier mobility which will subsequently lead to the decrease in resistivity. In summary, ZnO:Ga thin film with the lowest electrical resistivity of 2.01 Ã 10â4 Ω cm was obtained at a pulse frequency of 10 kHz with 500 nm in thickness. The surface RMS (root mean square) roughness of the film is 2.9 nm with visible transmittance around 86% and optical band gap of 3.83 eV.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Applied Surface Science - Volume 256, Issue 11, 15 March 2010, Pages 3432-3437
Journal: Applied Surface Science - Volume 256, Issue 11, 15 March 2010, Pages 3432-3437
نویسندگان
W.T. Yen, Y.C. Lin, P.C. Yao, J.H. Ke, Y.L. Chen,