Dielectric properties of anodic films on sputter-deposited Ti-Si porous columnar films

► Isolated columnar Ti and Ti-7 at% Si films were successfully prepared by oblique angle magnetron sputtering. ► A uniform amorphous anodic oxide film is grown on the porous Ti-Si, but is limited to less than 6 V on the porous titanium. ► Electric properties of anodic oxide films are improved markedly by the addition of silicon due to suppression of crystallization.